EFFECT OF SUBSTRATE-TEMPERATURE ON PROPERTIES OF GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON

被引：35

作者：

SHIRAFUJI, J

KUWAGAKI, M

SATO, T

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 10期

关键词：

D O I：

10.1143/JJAP.23.1278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1278 / 1286

页数：9

共 32 条

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[26] SUBSTRATE-TEMPERATURE DEPENDENCE OF ELECTRON-DRIFT MOBILITY IN GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON
SHIRAFUJI, J
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INUISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L184 - L186
[27] MORPHOLOGICAL FLUCTUATION AND ELECTRICAL-PROPERTIES OF SPUTTERED HYDROGENATED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 535 - 537
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1 - 14
[30] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
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