SPECIFIC CONTACT RESISTIVITY OF METAL-SEMICONDUCTOR CONTACTS - A NEW, ACCURATE METHOD LINKED TO SPREADING RESISTANCE

被引：18

作者：

CARVER, GP ^{[1
]}

KOPANSKI, JJ ^{[1
]}

NOVOTNY, DB ^{[1
]}

FORMAN, RA ^{[1
]}

机构：

[1] NBS, SEMICOND PROC RES LAB, RES PROGRAM, GAITHERSBURG, MD 20899 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 04期

关键词：

D O I：

10.1109/16.2483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：489 / 497

页数：9

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