EFFECTS OF DISCHARGE PARAMETERS ON DEPOSITION RATE OF HYDROGENATED AMORPHOUS-SILICON FOR SOLAR-CELLS FROM PURE SIH4 PLASMA

被引:16
作者
ISHIHARA, S [1 ]
KITAGAWA, M [1 ]
HIRAO, T [1 ]
WASA, K [1 ]
ARITA, T [1 ]
MORI, K [1 ]
机构
[1] MATSUSHITA BATTERY IND CO, TECHNOL LAB, MORIGUCHI, OSAKA 570, JAPAN
关键词
D O I
10.1063/1.339771
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:485 / 491
页数:7
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共 31 条
[1]   BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGE [J].
ANDO, K ;
AOZASA, M ;
PYON, RG .
APPLIED PHYSICS LETTERS, 1984, 44 (04) :413-415
[2]   DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J].
BRODSKY, MH .
THIN SOLID FILMS, 1977, 40 (JAN) :L23-L25
[3]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4]   MASS-TRANSFER ANALYSIS OF A-SI-H DEPOSITION BY THE GLOW-DISCHARGE PROCESS [J].
CHEN, I ;
JANSEN, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :695-698
[5]   SILANE DISSOCIATION MECHANISMS AND THIN-FILM FORMATION IN A LOW-PRESSURE MULTIPOLE DC DISCHARGE [J].
DREVILLON, B ;
HUC, J ;
LLORET, A ;
PERRIN, J ;
DEROSNY, G ;
SCHMITT, JPM .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :646-648
[6]   MEASUREMENT OF THE ELECTRON-DENSITY AND THE ATTACHMENT RATE COEFFICIENT IN SILANE HELIUM DISCHARGES [J].
FLEDDERMANN, CB ;
BEBERMAN, JH ;
VERDEYEN, JT .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1344-1348
[7]   RECENT ADVANCES IN AMORPHOUS-SILICON SOLAR-CELLS [J].
HAMAKAWA, Y .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :101-121
[8]   HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM A SIH4 PLASMA [J].
HAMASAKI, T ;
UEDA, M ;
CHAYAHARA, A ;
HIROSE, M ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1984, 44 (06) :600-602
[9]   NEW MODE OF PLASMA DEPOSITION IN A CAPACITIVELY COUPLED REACTOR [J].
HAMASAKI, T ;
UEDA, M ;
CHAYAHARA, A ;
HIROSE, M ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1984, 44 (11) :1049-1051
[10]   DETECTION OF NEUTRAL SPECIES IN SILANE PLASMA USING COHERENT ANTI-STOKES RAMAN-SPECTROSCOPY [J].
HATA, N ;
MATSUDA, A ;
TANAKA, K ;
KAJIYAMA, K ;
MORO, N ;
SAJIKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01) :L1-L3