SI DIFFUSION AND INTERMIXING IN ALGAAS/GAAS STRUCTURES USING BURIED IMPURITY SOURCES

被引：19

作者：

BEERNINK, KJ ^{[1
]}

THORNTON, RL ^{[1
]}

ANDERSON, GB ^{[1
]}

EMANUEL, MA ^{[1
]}

机构：

[1] LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94551

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期

关键词：

D O I：

10.1063/1.113154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si diffusion and impurity-induced layer intermixing from a buried impurity source have been studied by transmission electron microscopy and secondary ion mass spectroscopy of isolated, Si-doped GaAs layers in an undoped Al 0.4Ga0.6As/GaAs superlattice and by photoluminescence measurements on Si-doped GaAs quantum wells with undoped Al0.4Ga 0.6As barriers. In annealed samples, the Si profile suggests a Si diffusion process involving multiply ionized column III vacancies. The width of the resulting Si profile and the spatial extent and completeness of intermixing strongly depend on the initial Si concentration in the doped layer.© 1995 American Institute of Physics.

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页码：2522 / 2524

页数：3

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