HOT-CARRIER AGING OF THE MOS-TRANSISTOR IN THE PRESENCE OF SPIN-ON GLASS AS THE INTERLEVEL DIELECTRIC

被引：36

作者：

LIFSHITZ, N

SMOLINSKY, G

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 03期

关键词：

D O I：

10.1109/55.75737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of introducing a polysilicate or polysiloxane spin-on glass (SOG) as a component of the interlevel dielectric in a multilevel integrated circuit (IC) on the hot-carrier aging of the MOS transisitor was investigated. It was found that the presence of SOG led to accelerated aging of the MOS transistor: factors of 20 and 5 for silicate and siloxane, respectively. This effect is attributed to water absorbed in the SOG films. A correlation was found for the hot-carrier aging rate and the amount of absorbed water.

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收藏

页码：140 / 142

页数：3

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