COMMENT ON AMORPHOUS HYDROGENATED SILICON STUDIED BY POSITRON LIFETIME SPECTROSCOPY

被引：12

作者：

DANNEFAER, S

MASCHER, P

KERR, D

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 43卷 / 02期

关键词：

D O I：

10.1007/BF00617958

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：91 / 92

页数：2

共 14 条

[1] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[2] OXYGEN IN SILICON - A POSITRON-ANNIHILATION INVESTIGATION [J].

DANNEFAER, S ;

KERR, D .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1313-1321

[3] A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS [J].

DANNEFAER, S ;

KERR, D ;

HOGG, BG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :155-160

[4] MONOVACANCY FORMATION ENTHALPY IN SILICON [J].

DANNEFAER, S ;

MASCHER, P ;

KERR, D .

PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2195-2198

[5] A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON [J].

DANNEFAER, S ;

FRUENSGAARD, N ;

KUPCA, S ;

HOGG, B ;

KERR, D .

CANADIAN JOURNAL OF PHYSICS, 1983, 61 (03) :451-459

[6] POSITRON TRAPPING IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

FUHS, W ;

HOLZHAUER, U ;

RICHTER, FW .

APPLIED PHYSICS, 1980, 22 (04) :415-419

[7] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

FUHS, W ;

HOLZHAUER, U ;

MANTL, S ;

RICHTER, FW ;

STURM, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01) :69-75

[8] EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS [J].

LEE, YH ;

CORBETT, JW .

PHYSICAL REVIEW B, 1974, 9 (10) :4351-4361

[9]

MASCHER P, 1986, 18TH P INT C PHYS SE

[10] ELECTRONIC-STRUCTURE AND POSITRON STATES AT VACANCIES IN SI AND GAAS [J].

PUSKA, MJ ;

JEPSEN, O ;

GUNNARSSON, O ;

NIEMINEN, RM .

PHYSICAL REVIEW B, 1986, 34 (04) :2695-2705

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