DEEP LEVELS IN GAAS GROWN USING SUPERLATTICE INTERMEDIATE LAYERS ON SI SUBSTRATES BY MOCVD

被引：25

作者：

SOGA, T ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

HATTORI, S ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECTR & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期

关键词：

D O I：

10.1143/JJAP.25.1510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1510 / 1513

页数：4

共 16 条

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[9] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[10] ALGAAS/GAAS DH-LASERS ON SI SUBSTRATES GROWN USING SUPER LATTICE BUFFER LAYERS BY MOCVD [J].

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