LOCALIZED EPITAXIAL-GROWTH OF MOSI2 ON SILICON

被引：20

作者：

LIN, WT

CHEN, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.336458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1518 / 1524

页数：7

共 20 条

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