CHARACTERIZATION OF THE LEAKAGE-CURRENT DIFFUSION COMPONENT IN INTRINSICALLY GETTERED SILICON BY EBIC

被引：9

作者：

KITTLER, M

SEIFERT, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 99卷 / 02期

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D O I：

10.1002/pssa.2210990227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：559 / 572

页数：14

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