CHARACTERIZATION OF CRYSTAL DEFECTS AT LEAKAGE SITES IN CHARGE-COUPLED-DEVICES

被引：12

作者：

OGDEN, R ^{[1
]}

WILKINSON, JM ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：412 / 414

页数：3

共 12 条

[1] NONOVERLAPPING GATE CHARGE-COUPLING TECHNOLOGY FOR SERIAL MEMORY AND SIGNAL-PROCESSING APPLICATIONS
BROWNE, VA
PERKINS, KD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (02) : 271 - 275
[2] GENERATION LIFETIME INVESTIGATION OF ION-DAMAGE GETTERED SILICON USING MOS STRUCTURE
NASSIBIAN, AG
BROWNE, VA
PERKINS, KD
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 992 - 996
[3] THERMAL CARRIER GENERATION IN CHARGE-COUPLED-DEVICES
ONG, DG
PIERRET, RF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) : 593 - 602
[4] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON.
Ravi, K.V.
Varker, C.J.
Volk, C.E.
[J]. Journal of the Electrochemical Society, 1973, 120 (04) : 533 - 541
[5] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS
ROZGONYI, GA
PETROFF, PM
READ, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729
[6] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS
ROZGONYI, GA
KUSHNER, RA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 570 - 576
[7] DISLOCATION ETCH FOR (100) PLANES IN SILICON
SECCODARAGONA, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 948 - +
[8] DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI
SEIDEL, TE
MEEK, RL
CULLIS, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 600 - 609
[9] SILICON WAFER ANNEALING EFFECT IN LOOP DEFECT GENERATION
SHIRAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) : 1514 - 1523
[10] ELIMINATION OF STACKING-FAULTS IN SILICON WAFERS BY HCL ADDED DRY O2 OXIDATION
SHIRAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) : 747 - 752

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