CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS WITH NATIVE-OXIDE FREE SURFACES

被引:2
作者
SAKAI, A
TATSUMI, T
NIINO, T
ONO, H
ISHIDA, K
机构
来源
DENKI KAGAKU | 1991年 / 59卷 / 12期
关键词
AMORPHOUS SILICON; CRYSTALLIZATION; NATIVE OXIDE LAYER; SURFACE; NUCLEATION; HF TREATMENT; O2 PARTIAL PRESSURE;
D O I
10.5796/kogyobutsurikagaku.59.1043
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Crystallization of amorphous Si (a-Si) on SiO2 layers under ultra-high vacuum (UHV) conditions was examined. In the case that the a-Si layer with a native oxide free surface was annealed in the UHV molecular-beam-epitaxy chamber, it has been found that the initial nucleation and the grain growth occur at the surface. Cross-sectional transmission electron microscopy revealed the novel mode of the grain growth which resulted in the formation of mushroom-shaped Si grains at the a-Si surface. The surface crystallization phenomenon was found to be sensitive to the oxygen partial pressure during the annealing. Reappearance of the surface crystallization was also confirmed in the air-exposed a-Si film whose surface native-oxide layer was removed by HF solution just before the UHV annealing. The crystallization mechanism of the a-Si with the clean surface was discussed.
引用
收藏
页码:1043 / 1049
页数:7
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