PHYSICAL MECHANISMS OF RADIATION HARDENING OF MOS DEVICES BY ION-IMPLANTATION

被引：7

作者：

CURTIS, OL ^{[1
]}

SROUR, JR ^{[1
]}

CHIU, KY ^{[1
]}

机构：

[1] NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期

关键词：

D O I：

10.1109/TNS.1975.4328100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2174 / 2180

页数：7

共 12 条

[1] AUBUCHON KG, 1971, IEEE T NUCL SCI, V18, P177
[2] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
AUSMAN, GA
MCLEAN, FB
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175
[3] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[4] RADIATION HARDENING OF THERMAL OXIDES ON SILICON BY DISPLACEMENT DAMAGE
DONOVAN, RP
SIMONS, M
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2897 - +
[5] GAMMA AND VACUUM ULTRAVIOLET IRRADIATIONS OF ION-IMPLANTED SIO2 FOR MOS DIELECTRICS
EMMS, CG
HOLMESSIEDLE, AG
GROOMBRIDGE, I
BOSNELL, JR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 159 - 166
[6] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS
EVERHART, TE
HOFF, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &
[7] OXIDE CHARGE TRAPPING INDUCED BY ION-IMPLANTATION IN SIO2
HARARI, E
ROYCE, BSH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) : 288 - 292
[8] DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
HUGHES, HL
BAXTER, RD
PHILLIPS, B
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 256 - 263
[9] ELECTRON TRAPPING IN ALUMINUM-IMPLANTED SILICON DIOXIDE FILMS ON SILICON
JOHNSON, NM
JOHNSON, WC
LAMPERT, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1216 - 1222
[10] RADIATION EFFECTS IN MODIFIED OXIDE INSULATORS IN MOS STRUCTURES
PERKINS, CW
AUBUCHON, KG
DILL, HG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) : 176 - +

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