P+-N+ GAAS TUNNEL JUNCTION DIODES GROWN BY FLOW-RATE MODULATION EPITAXY

被引：2

作者：

MAKIMOTO, T

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

P-N JUNCTION; FLOW-RATE MODULATION EPITAXY; GAAS; TUNNEL DIODE; CARBON DOPING;

D O I：

10.1143/JJAP.29.L2250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper discusses the p+-n+ GaAs tunnel junction diodes grown by flow-rate modulation epitaxy using carbon and silicon as p-type and n-type dopants, respectively. It also investigates the effect of the conditions of p+-n+ junction interfaces on the excess current. While the excess current drastically increases when p+- and n+ -layers are overlapped on an atomic scale, it gradually decreases and tends to saturate when the undoped layer thickness inserted at the interface is increased. These results indicate that the p+-n+ junction interfaces grown by flow-rate modulation epitaxy are quite abrupt.

引用

页码：L2250 / L2253

页数：4

共 14 条

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