INSITU MEASUREMENTS OF SIO(G) PRODUCTION DURING DRY OXIDATION OF CRYSTALLINE SILICON

被引：97

作者：

WALKUP, RE

RAIDER, SI

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

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D O I：

10.1063/1.100105

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：888 / 890

页数：3

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