AMPHOTERIC PROPERTY OF ELECTRICALLY ACTIVE NICKEL IN SILICON

被引：29

作者：

KITAGAWA, H ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] KYUSHU UNIV,DEPT ELECT ENGN,FUKUOKA 812,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：305 / 310

页数：6

共 18 条

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[10] NICKEL-RELATED DEEP LEVELS IN SILICON STUDIED BY COMBINED HALL-EFFECT AND DLTS MEASUREMENT [J].

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