NONCONTACT ENERGY-LEVEL ANALYSIS OF METALLIC IMPURITIES IN SILICON-CRYSTALS

被引：27

作者：

KIRINO, Y

BUCZKOWSKI, A

RADZIMSKI, ZJ

ROZGONYI, GA

SHIMURA, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Noncontact laser/microwave deep level transient spectroscopy (LM-DLTS) based on the measurement of microwave reflection power as a function of temperature has been developed and applied to Czochralski silicon crystals intentionally contaminated with selected metals during crystal growth. The energy levels related to these metallic impurities in p-type silicon have been obtained on bare silicon for the first time without any electrode contact or special sample preparation. The data agree in very satisfactory fashion with results obtained by conventional DLTS.

引用

页码：2832 / 2834

页数：3

共 20 条

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