ATOMIC LAYER EPITAXY OF ALAS USING DIMETHYLALUMINUMHYDRIDE TRIMETHYLALUMINUM MIXTURE AS THE AL SOURCE

被引：20

作者：

ISHIZAKI, M

KANO, N

YOSHINO, J

KUKIMOTO, H

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3B期

关键词：

ATOMIC LAYER EPITAXY; AIA; METALORGANIC VAPOR PHASE EPITAXY; DIMETHYLALUMINUMHYDRIDE; SELF-LIMITING GROWTH;

D O I：

10.1143/JJAP.30.L428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of AlAs epitaxial layers was studied by using a mixture of dimethylaluminumhydride (DMAlH)/trimethylaluminum (TMAl) and arsine in a four step gas injection sequence which involves two steps of hydrogen purge separating DMAlH/TMAl and arsine at different pulse durations of the DMAlH/TMAl flow and at temperatures ranging from 250-degrees-C to 650-degrees-C. One- and two-monolayer self-limiting growths of AlAs were achieved depending on pulse duration of DMAlH/TMAl flow and growth temperature.

引用

收藏

页码：L428 / L430

页数：3

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