SELF-CONSISTENT CALCULATION OF ELECTRON-DENSITY IN A 2-CHANNEL MODULATION-DOPED STRUCTURE

A method of self-consistent calculation of energy levels, electron density and conduction band-edge profile is described. Schrödinger's equation is solved by using a variational approach that reduces it to a matrix equation. The solution of the matrix eigenvalue problem gives all the solutions and eigenenergies for a given conduction band-edge profile. Poisson's equation is then solved to get the new profile and the procedure is repeated till convergence is reached. The results of application of this method to two structures are described. One is a single-channel modulation-doped structure and the other is a two-channel modulation doped structure. The calculation is carried out for the AlGaAs-GaAs material system. The implications of this calculation on device performance are pointed out. The two-channel structure is expected to result in higher drain currents but about the same transconductance value as the single-channel structure. Possible complications in applying this procedure to more complex structures are discussed. © 1990.