PHENOMENA PRODUCED BY ION-BOMBARDMENT IN PLASMA-ASSISTED ETCHING ENVIRONMENTS

被引:30
作者
WINTERS, HF
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期
关键词
D O I
10.1116/1.575225
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1997 / 2000
页数:4
相关论文
共 29 条
[1]   SPUTTERING OF CHLORINATED SILICON SURFACES STUDIED BY SECONDARY ION MASS-SPECTROMETRY AND ION-SCATTERING SPECTROSCOPY [J].
BARISH, EL ;
VITKAVAGE, DJ ;
MAYER, TM .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1336-1342
[2]   ION ENHANCED REACTIVE ETCHING OF TUNGSTEN SINGLE-CRYSTALS AND FILMS WITH XEF2 [J].
BENSAOULA, A ;
STROZIER, JA ;
IGNATIEV, A ;
YU, J ;
WOLFE, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1921-1924
[3]   THE ROLE OF ENERGETIC ION-BOMBARDMENT IN SILICON-FLUORINE CHEMISTRY [J].
COBURN, JW ;
WINTERS, HF .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (01) :243-248
[4]   STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS [J].
DIELEMAN, J ;
SANDERS, FHM ;
KOLFSCHOTEN, AW ;
ZALM, PC ;
DEVRIES, AE ;
HARING, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1384-1392
[5]   STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J].
DONNELLY, VM ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5273-5276
[6]  
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[7]   MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J].
HARING, RA ;
HARING, A ;
SARIS, FW ;
DEVRIES, AE .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :174-176
[9]   ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J].
KOLFSCHOTEN, AW ;
HARING, RA ;
HARING, A ;
DEVRIES, AE .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3813-3818
[10]  
LEE YH, 1985, APPL PHYS LETT, V46, P260, DOI 10.1063/1.95918