PLASMA OXIDATION OF SILICON

被引：14

作者：

RAY, AK

机构：

来源：

THIN SOLID FILMS | 1981年 / 84卷 / 04期

关键词：

D O I：

10.1016/0040-6090(81)90174-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：389 / 396

页数：8

共 22 条

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[6] GROWTH OF SIO2-FILMS ON SI IN AN OXYGEN MICROWAVE-DISCHARGE [J].

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[7] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

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[8] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J].

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[9] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J].

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[10]

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