GROWTH-KINETICS ON VICINAL SURFACES

被引：8

作者：

VVEDENSKY, DD

CLARKE, S

HUGILL, KJ

WILBY, MR

KAWAMURA, T

机构：

[1] The Blackett Laboratory and Semiconductor Materials IRC, Imperial College, London

[2] The Blackett Laboratory, Imperial College, London

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

Crystals;

D O I：

10.1016/0022-0248(90)90483-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The application of Monte Carlo simulations to the kinetics of growth on vicinal surfaces by molecular beam epitaxy (MBE) is reviewed. Comparison with the experiments of Neave et al. illustrates the role of kinetic factors in determining the mode of growth at a given substrate temperature. The importance of surface steps in homoepitaxy upon the Si(001) surface is highlighted by inclusion of anisotropic bonding in the model to account for dimer formation. Application to the fabrication of quantum-well wires by MBE reveals an optimum regime of growth conditions (substrate temperature and beam flux) for producing high-quality structures. © 1990.

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收藏

页码：54 / 59

页数：6

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