TRANSIENT AND STEADY DECAY OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED ALXGA1-XAS

被引：8

作者：

SAMPAIO, JF

CHAVES, AS

RIBEIRO, GM

GUIMARAES, PSS

DECARVALHO, RP

DEOLIVEIRA, AG

机构：

[1] Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, 30161, Minas Gerais

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10933

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The decay of persistent photoconductivity (PPC) in bulk Al0.3Ga0.7AS:Si was investigated at 77 K. A transient decay was observed to appear if the light is shut off while the conduction-electron concentration is increasing quickly. The decay of PPC is analyzed based on the negative-U model for the DX center. It is shown that this transient indicates that the decay of the DX center goes via a neutral metastable state DX0 of silicon.

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页码：10933 / 10936

页数：4

相关论文

共 19 条

[1] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY [J].

CHADI, DJ ;

CHANG, KJ ;

WALUKIEWICZ, W .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1923-1923

[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[4]

DABROWSKI J, 1990, 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, P489

[5] EVIDENCE FOR NEGATIVELY CHARGED DX-CENTER IN SI-DOPED ALGAAS FROM PERSISTENT PHOTOCONDUCTIVITY MEASUREMENTS [J].

DIAS, IFL ;

DEOLIVEIRA, AG ;

BEZERRA, JC ;

MIRANDA, RC ;

GUIMARAES, PSS ;

SAMPAIO, JF ;

CHAVES, AS .

SOLID STATE COMMUNICATIONS, 1991, 77 (05) :327-330

[6] DIRECT EVIDENCE FOR 2-STEP PHOTOIONIZATION OF DX(TE) CENTERS IN ALXGA1-XAS [J].

DOBACZEWSKI, L ;

KACZOR, P .

PHYSICAL REVIEW LETTERS, 1991, 66 (01) :68-71

[7] TRANSIENT DECAY OF PERSISTENT PHOTOCONDUCTIVITY IN AL0.3GA0.7AS [J].

DOBSON, TW ;

SCALVI, LVA ;

WAGER, JF .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) :601-605

[8]

KACHATURYAN KA, 1989, MATER SCI FORUM, V38, P1067

[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[10] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS [J].

MAUDE, DK ;

EAVES, L ;

FOSTER, TJ ;

PORTAL, JC .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1922-1922