HETEROEPITAXY OF INGAAS ON GAAS SUBSTRATE WITH INALAS INTERMEDIATE LAYER

[1] GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 19 - 30

[2] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 523 - 525

[3] BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4672 - 4675

[4] CHOI HK, 1987, MATER RES SOC S P, V91, P213

[5] FAN JCC, 1986, MATERIALS RES SOC S, V67

[6] ISHIDA K, 1987, JAPAN J APPL PHYS, V26, P1163

[7] SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES [J]. ELECTRONICS LETTERS, 1985, 21 (09) : 373 - 374

[8] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[9] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[10] IMPROVEMENTS IN THE HETEROEPITAXY OF GAAS ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 36 - 38

[1] GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 19 - 30

[2] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 523 - 525

[3] BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4672 - 4675

[4] CHOI HK, 1987, MATER RES SOC S P, V91, P213

[5] FAN JCC, 1986, MATERIALS RES SOC S, V67

[6] ISHIDA K, 1987, JAPAN J APPL PHYS, V26, P1163

[7] SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES [J]. ELECTRONICS LETTERS, 1985, 21 (09) : 373 - 374

[8] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[9] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[10] IMPROVEMENTS IN THE HETEROEPITAXY OF GAAS ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 36 - 38