A NEW MOSFET WITH LARGE-TILT-ANGLE IMPLANTED DRAIN (LATID) STRUCTURE

被引：24

作者：

HORI, T

KURIMOTO, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1109/55.723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：300 / 302

页数：3

共 11 条

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