EFFECT OF SYNCHROTRON-RADIATION ON ELECTRICAL CHARACTERISTICS OF SIONY THIN-FILMS FORMED BY RAPID THERMAL-PROCESSING IN A N2O AMBIENT

被引：4

作者：

ARAKAWA, T ^{[1
]}

YAMASHITA, Y ^{[1
]}

HOGA, H ^{[1
]}

NODA, S ^{[1
]}

FUKUDA, H ^{[1
]}

机构：

[1] SORTEC CORP,TSUKUBA,IBARAKI 30042,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The synchrotron radiation durability of SiO(x)N(y) films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO(x)N(y) metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400-degrees-C for 30 min.

引用

页码：3364 / 3366

页数：3

共 19 条

[1] SYNCHROTRON RADIATION-DAMAGE MECHANISM OF X-RAY MASK MEMBRANES IRRADIATED IN HELIUM ENVIRONMENT [J].

ARAKAWA, T ;

OKUYAMA, H ;

OKADA, K ;

NAGASAWA, H ;

SYOKI, T ;

YAMAGUCHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B) :4459-4462

[2] 2 DISTINCT INTERFACE TRAP PEAKS IN RADIATION-DAMAGED METAL/SIO2/SI STRUCTURES [J].

DASILVA, EF ;

NISHIOKA, Y ;

MA, TP .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :270-272

[3] EFFECT OF SYNCHROTRON X-RAY-RADIATION ON THE CHANNEL HOT-CARRIER RELIABILITY OF REOXIDIZED NITRIDED SILICON DIOXIDE [J].

DUNN, GJ .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (01) :8-9

[4] DEGRADATION BEHAVIOR OF 0.5-MU-M PARA-CHANNEL METAL-OXIDE SEMICONDUCTOR TRANSISTORS FABRICATED BY MEANS OF X-RAY AND OPTICAL LITHOGRAPHY [J].

FRIEDRICH, D ;

BERNT, H ;

SCHMIDT, L ;

WINDBRACKE, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1638-1642

[5] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT [J].

FUKUDA, H ;

ARAKAWA, T ;

OHNO, S .

ELECTRONICS LETTERS, 1990, 26 (18) :1505-1506

[6] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT [J].

FUKUDA, H ;

ARAKAWA, T ;

OHNO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2333-L2336

[7] NOVEL N2O-OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE EEPROM TUNNEL OXIDE-FILMS [J].

FUKUDA, H ;

YASUDA, M ;

IWABUCHI, T ;

OHNO, S .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) :587-589

[8] ELECTRICAL-PROPERTIES OF THIN OXYNITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT [J].

FUKUDA, H ;

YASUDA, M ;

OHNO, S .

ELECTRONICS LETTERS, 1991, 27 (05) :440-441

[9] IMPROVEMENT OF HARDNESS OF MOS CAPACITORS TO ELECTRON-BEAM IRRADIATION AND HOT-ELECTRON INJECTION BY ULTRA-DRY OXIDATION OF SILICON [J].

HARUTA, R ;

OHJI, Y ;

NISHIOKA, Y ;

YOSHIDA, I ;

MUKAI, K ;

SUGANO, T .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) :27-29

[10] HOT-ELECTRON-INDUCED INSTABILITY IN 0.5-MU-M P-CHANNEL MOSFETS PATTERNED USING SYNCHROTRON X-RAY-LITHOGRAPHY [J].

HSU, CCH ;

WANG, LK ;

WORDEMAN, MR ;

NING, TH .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (07) :327-329

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