AMPHOTERIC BEHAVIOR OF GERMANIUM IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY

被引：9

作者：

LEE, JB ^{[1
]}

KIM, I ^{[1
]}

KWON, HK ^{[1
]}

CHOE, BD ^{[1
]}

机构：

[1] SEOUL NATL UNIV,DEPT PHYS,SEOUL 151,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of Ge-doped In0.5Ga0.5P grown by liquid phase epitaxy were investigated by Hall effect, capacitance-voltage, photoluminescence, and electroluminescence measurements. The Ge dopant in InGaP shows amphoteric behavior with a compensation ratio (N(a)/N(d)) of about 0.4. The activation energies of donor and acceptor were measured to be 47 and 58 meV, respectively. The deep acceptor transition related to Ge complex is also observed by luminescence measurements.

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页码：1620 / 1622

页数：3

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