AN ANALYTICAL 2-DIMENSIONAL SIMULATION FOR THE GAAS-MESFET DRAIN-INDUCED BARRIER LOWERING - A SHORT-CHANNEL EFFECT

An analytic model is developed for simulating the GaAs MESFET drain-induced barrier lowering and its effect on the device performance. The potential barrier between the source and drain of a field-effect transistor in or near the subthreshold region is lowered by increasing the drain voltage. As the barrier is lowered to be comparable to the thermal energy, an appreciable current will flow through the channel, and the device will begin to conduct. This effect causes the threshold voltage control problem and degrades the device performance. © 1990 IEEE