MICROSTRUCTURE OF ALUMINUM-COPPER THIN-FILMS AND ITS RELATION TO ELECTROMIGRATION

被引：5

作者：

VAVRA, I

LUBY, S

机构：

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1980年 / 30卷 / 02期

关键词：

D O I：

10.1007/BF01595682

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：175 / &

共 20 条

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AGARWALA, BN ;

BERENBAUM, L ;

PERESSININ, P .

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[2] EFFECT OF MICROSTRUCTURE ON ELECTROMIGRATION LIFE OF THIN-FILM AL-CU CONDUCTORS [J].

AGARWALA, BN ;

PATNAIK, B ;

SCHNITZE.R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1487-&

[3]

AGARWALA BN, 1976, THIN SOLID FILMS, V34, P165, DOI 10.1016/0040-6090(76)90159-0

[4] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].

AMES, I ;

DHEURLE, FM ;

HORSTMANN, RE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+

[5] STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS [J].

ATTARDO, MJ ;

RUTLEDGE, R ;

JACK, RC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4343-&

[6] COPPER ELECTROMIGRATION IN ALUMINUM [J].

BLECH, IA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :473-477

[7]

d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243

[8]

DHeurle F. M., 1973, PHYS THIN FILMS, V7, P257

[9] ELECTROMIGRATION AND FAILURE IN ELECTRONICS - INTRODUCTION [J].

DHEURLE, FM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1409-&

[10]

KAKAR AK, 1973, SOLID STATE TECHNOL, V16, P47

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