GAP STATES IN UNDOPED AMORPHOUS-SILICON STUDIED BY BELOW-GAP MODULATED PHOTOCURRENT SPECTROSCOPY

被引：20

作者：

ABE, K

OKAMOTO, H

NITTA, Y

TSUTSUMI, Y

HATTORI, K

HAMAKAWA, Y

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1988年 / 58卷 / 02期

关键词：

D O I：

10.1080/13642818808208479

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：171 / 184

页数：14

共 29 条

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