TRANSIENT RADIATION EFFECTS IN ALGAAS/GAAS MODFETS

被引：12

作者：

ANDERSON, WT

SIMONS, M

TSENG, WF

HERB, JA

BANDY, S

机构：

[1] RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA

[2] VARIAN RES CTR, PALO ALTO, CA 94303 USA

[3] GOULD INC, SAN JOSE, CA 95134 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1669 / 1675

页数：7

共 16 条

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[3]

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[8] DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS [J].

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[9]

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[10] PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS/GAAS MODULATION DOPED LAYERS AND FIELD-EFFECT TRANSISTORS - A REVIEW [J].

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