CURRENT DEEP-LEVEL TRANSIENT SPECTROSCOPY IN MOS STRUCTURES WITH A BOXCAR INTEGRATOR AND AN ARBITRARY GATE-WIDTH-DATA ANALYSIS

被引：7

作者：

DMOWSKI, K

BETHGE, K

机构：

[1] Institut für Kernphysik, Universität Frankfurt, D 6000 Frankfurt am Main 90

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1991年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.1142055

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

New formulas are given describing the current correlation signals of bulk traps and interface states in metal-oxide-semiconductor structures. The presented formulas describe the correlation signals for analog measurement systems utilizing a single-channel or a two-channel boxcar integrator. These formulas take into account both the so-called Lambda effect and an arbitrarily chosen gate width of a boxcar integrator. A comparative analysis has been made of a potential sensitivity and selectivity of these systems as a function of a gate width.

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页码：1037 / 1046

页数：10

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