CURRENT DEEP-LEVEL TRANSIENT SPECTROSCOPY IN MOS STRUCTURES WITH A BOXCAR INTEGRATOR AND AN ARBITRARY GATE-WIDTH-DATA ANALYSIS

被引：7

作者：

DMOWSKI, K

BETHGE, K

机构：

[1] Institut für Kernphysik, Universität Frankfurt, D 6000 Frankfurt am Main 90

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1991年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.1142055

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

New formulas are given describing the current correlation signals of bulk traps and interface states in metal-oxide-semiconductor structures. The presented formulas describe the correlation signals for analog measurement systems utilizing a single-channel or a two-channel boxcar integrator. These formulas take into account both the so-called Lambda effect and an arbitrarily chosen gate width of a boxcar integrator. A comparative analysis has been made of a potential sensitivity and selectivity of these systems as a function of a gate width.

引用

页码：1037 / 1046

页数：10

共 74 条

[21] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS [J].

HURTES, C ;

BOULOU, M ;

MITONNEAU, A ;

BOIS, D .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :821-823

[22] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :802-804

[23] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

JOHNSON, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :303-314

[24] HYDROGEN PASSIVATION OF THE OXYGEN-RELATED THERMAL-DONOR DEFECT IN SILICON [J].

JOHNSON, NM ;

HAHN, SK .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :709-711

[25] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS [J].

JOHNSON, NM ;

BARTELINK, DJ ;

MCVITTIE, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1407-1411

[26] CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORS [J].

JOHNSON, NM ;

BARTELINK, DJ ;

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4828-4833

[27]

JOHNSON NM, 1978, PHYSICS SIO2 ITS INT

[28] PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICON [J].

KALYANARAMAN, V ;

KUMAR, V .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01) :317-323

[29] MEASUREMENT OF DEEP STATES IN UNDOPED AMORPHOUS-SILICON BY CURRENT TRANSIENT SPECTROSCOPY [J].

KIDA, H ;

HATTORI, K ;

OKAMOTO, H ;

HAMAKAWA, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) :4079-4086

[30] ANALYSIS OF WEIGHTING FUNCTION IN TRANSIENT SPECTROSCOPY FOR PRECISE MEASUREMENT OF DEEP STATES [J].

KIDA, H ;

SAKITA, K ;

NOHDA, T ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (01) :39-45

← 1 2 3 4 5 6 7 8 →