SILICIDE FORMATION

被引：26

作者：

OTTAVIANI, G

NOBILI, C

机构：

[1] Modena Univ, Italy

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

Crystallization - Electric Properties - Integrated Circuit Manufacture;

D O I：

10.1016/0040-6090(88)90416-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The physical mechanisms responsible for silicide formation are reviewed. The analysis includes phase formation, impurity effects, alloy crystallization, oxidation, impurity distribution and electrical properties. The data are presented referring, when possible, to the Ti-Si system. TiSi2 has two different crystalline structures: one orthorhombic base-centred C49 structure, which forms at low temperatures (around 400°C), and another, orthorhombic face-centred C54 structure, which forms around 700°C. Once the face-centred phase is formed it is stable irrespective of the annealing processes subsequently performed.

引用

页码：111 / 121

页数：11

共 43 条

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