THE BREAKDOWN VOLTAGE OF SILICON DIOXIDE BREAKDOWN DETECTORS FOR FISSION FRAGMENTS

被引：8

作者：

KLEIN, N

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 189卷 / 2-3期

关键词：

D O I：

10.1016/0029-554X(81)90444-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：569 / 576

页数：8

共 11 条

[1] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :50-54

[2] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :37-46

[3] FORMATION OF ETCHABLE TRACKS IN DIELECTRICS [J].

KATZ, R ;

KOBETICH, EJ .

PHYSICAL REVIEW, 1968, 170 (02) :401-&

[4] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J].

KLEIN, N ;

SOLOMON, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4364-4372

[5]

KLEIN N, 1978, THIN SOLID FILMS, V50, P233

[6] THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC [J].

ODWYER, JJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :3887-&

[7] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

OSBURN, CM ;

WEITZMAN, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :603-+

[8] INJECTION INTO INSULATORS IN PRESENCE OF SPACE-CHARGE [J].

SHATZKES, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4868-4872

[9] ON THE RESPONSE OF A BREAKDOWN COUNTER TO PULSED GAMMA-RADIATION AND ELECTRON-RADIATION [J].

SMIRNOV, AN ;

EISMONT, VP ;

NOGA, VI ;

RANJUK, YN .

NUCLEAR INSTRUMENTS & METHODS, 1980, 176 (03) :601-603

[10] IMPACT IONIZATION IN SILICON DIOXIDE AT FIELDS IN BREAKDOWN RANGE [J].

SOLOMON, P ;

KLEIN, N .

SOLID STATE COMMUNICATIONS, 1975, 17 (11) :1397-1400

← 1 2 →