ANTIPHASE DOMAINS IN GAAS GROWN ON A (001)-ORIENTED SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

NOGE, H

KANO, H

HASHIMOTO, M

IGARASHI, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2246 / 2248

页数：3

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