RADIOACTIVE SILICON TRACER STUDIES OF FORMATION OF CRSI2 ON PD2SI AND PTSI

被引：37

作者：

PRETORIUS, R ^{[1
]}

OLOWOLAFE, JO ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1978年 / 37卷 / 03期

关键词：

D O I：

10.1080/01418617808239171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：327 / 336

页数：10

共 15 条

[1] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
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[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 901 - &
[2] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS
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MAYER, JW
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[J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41
[3] STUDIES OF TI-W METALLIZATION SYSTEM ON SI
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 120 - 124
[4] STRESSES IN THIN NICKEL SILICIDE FILMS
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NEUMANN, HG
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (02): : K115 - K116
[5] FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER
OLOWOLAFE, JO
NICOLET, MA
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5182 - 5186
[6] INFLUENCE OF NATURE OF SI SUBSTRATE ON NICKEL SILICIDE FORMED FROM THIN NI FILMS
OLOWOLAFE, JO
NICOLET, MA
MAYER, JW
[J]. THIN SOLID FILMS, 1976, 38 (02) : 143 - 150
[7] CHROMIUM THIN-FILM AS A BARRIER TO INTERACTION OF PD2SI WITH AL
OLOWOLAFE, JO
NICOLET, MA
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[J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 413 - 415
[8] RADIOACTIVE SILICON AS A MARKER IN THIN-FILM SILICIDE FORMATION
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RAMILLER, CL
LAU, SS
NICOLET, MA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (10) : 501 - 503
[9] GROWTH MECHANISM FOR SOLID-PHASE EPITAXY OF SI IN SI (100)/PD2SI/SI(AMORPHOUS) SYSTEM STUDIED BY A RADIOACTIVE-TRACER TECHNIQUE
PRETORIUS, R
LIAU, ZL
LAU, SS
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2886 - 2890
[10] DISSOCIATION MECHANISM FOR SOLID-PHASE EPITAXY OF SILICON IN SI[100]/PD2SI/SI (AMORPHOUS) SYSTEM
PRETORIUS, R
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NICOLET, MA
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 598 - 600

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