PREPARATION OF SURFACE SILICON-NITRIDE FILMS BY LOW-ENERGY ION-IMPLANTATION

被引：19

作者：

THOMAS, GE

BECKERS, LJ

HABRAKEN, FHPM

KUIPER, AET

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：56 / 59

页数：4

共 15 条

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[7]

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[8] AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE FORMATION OF SILICON-NITRIDE BY IMPLANTING LOW-ENERGY NITROGEN-IONS INTO SILICON [J].

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