EVALUATION OF THE STOPPING DEPTH OF NONRADIATIVE RECOMBINATION CENTERS IN AL0.5GA0.5AS BY AR+ ION-BEAM SPUTTERING BY PHOTOLUMINESCENCE MEASUREMENTS

The stopping depth of nonradiative recombination centers in Al0 5Ga0 5As by Ar+ion beam sputtering was evaluated by photoluminescence (PL) measurements using Aiq5Gag 5As/GaAs single heterostructures. Al0 5Ga0 5As layers were sputtered by an Ar +ion beam with energies from 0.5 to 3 keV at temperatures from 0 to 300 °C. The PL intensity of the underlying GaAs was measured to detect the damage (nonradiative recombination center). The thickness of the residual Al0 5Gao 5As layer at which the PL intensity of the GaAs began to fall was taken as the stopping depth of nonradiative recombination centers. This depth increased as Ar +ion energy increased and sputtering temperature decreased. The depth of damage was roughly proportional to the Ar + ion energy E at about 25 °C for E less than 3 keV. © 1990, American Vacuum Society. All rights reserved.