LASER OPERATION OF HETEROEPITAXIAL INXGA1-XAS BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

HIYAMIZU, S

FUJII, T

NANBU, K

MAEKAWA, S

HISATSUGU, T

机构：

[1] Fujitsu Laboratories Ltd., Nakahara-ku, Kawasaki

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90388-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A laser quality, n-type In0.16Ga0.84As film on GaAs has been successfully obtained by introducing abrupt steps and steep graded regions in a compositionally graded buffer layer (a saw-tooth-like graded buffer layer) by molecular beam epitaxy. Homojunction lasers have been fabricated with Zn diffusion, and a threshold current density as low as 3000 A cm2 has been attained at a wavelength of 0.960 micro at 77 K. © 1979.

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页码：137 / 143

页数：7

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