UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS

被引：10

作者：

HWANG, HP ^{[1
]}

SHIEH, JL ^{[1
]}

LIN, RM ^{[1
]}

CHYI, JI ^{[1
]}

TU, SL ^{[1
]}

PENG, CK ^{[1
]}

YANG, SJ ^{[1
]}

机构：

[1] CHUNG SHAN INSST SCI & TECHNOL,CTR MAT RES & DEV,LUNGTAN,TAIWAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 10期

关键词：

RESONANT TUNNELING DEVICES; DIODES;

D O I：

10.1049/el:19940435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors investigate the current-voltage characteristics Of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

引用

页码：826 / 828

页数：3

共 12 条

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