MATERIALS OPTIONS FOR FIELD-EFFECT TRANSISTORS

[1] EVIDENCE FOR ALLOY SCATTERING FROM PRESSURE-INDUCED CHANGES OF ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J]. ELECTRONICS LETTERS, 1980, 16 (14) : 560 - 562

[2] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 430 - 435

[3] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65

[4] ANTYPAS GA, 1977, GALLIUM ARSENIDE REL, P55

[5] REDISTRIBUTION OF CHROMIUM IN SEMI-INSULATING GAAS-CR DURING LASER ANNEALING [J]. ELECTRONICS LETTERS, 1980, 16 (14) : 554 - 556

[6] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 965 - 967

[7] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[8] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[9] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 485 - 488

[10] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248

[1] EVIDENCE FOR ALLOY SCATTERING FROM PRESSURE-INDUCED CHANGES OF ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J]. ELECTRONICS LETTERS, 1980, 16 (14) : 560 - 562

[2] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 430 - 435

[3] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65

[4] ANTYPAS GA, 1977, GALLIUM ARSENIDE REL, P55

[5] REDISTRIBUTION OF CHROMIUM IN SEMI-INSULATING GAAS-CR DURING LASER ANNEALING [J]. ELECTRONICS LETTERS, 1980, 16 (14) : 554 - 556

[6] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 965 - 967

[7] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[8] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[9] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 485 - 488

[10] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248