共 109 条
MATERIALS OPTIONS FOR FIELD-EFFECT TRANSISTORS
被引:15
作者:

WIEDER, HH
论文数: 0 引用数: 0
h-index: 0
机构:
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1981年
/
18卷
/
03期
关键词:
D O I:
10.1116/1.570957
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
引用
收藏
页码:827 / 837
页数:11
相关论文
共 109 条
- [21] SURFACE VACANCIES IN INP AND GAAIAS[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 690 - 692DAW, MS论文数: 0 引用数: 0 h-index: 0SMITH, DL论文数: 0 引用数: 0 h-index: 0
- [22] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 951 - 954DILORENZO, JV论文数: 0 引用数: 0 h-index: 0机构: Bell Laboratories, Murray HillNIEHAUS, WC论文数: 0 引用数: 0 h-index: 0机构: Bell Laboratories, Murray HillCHO, AY论文数: 0 引用数: 0 h-index: 0机构: Bell Laboratories, Murray Hill
- [23] HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION[J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 475 - 478DONNELLY, JP论文数: 0 引用数: 0 h-index: 0HURWITZ, CE论文数: 0 引用数: 0 h-index: 0
- [24] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &DRANGEID, KE论文数: 0 引用数: 0 h-index: 0SOMMERHA.R论文数: 0 引用数: 0 h-index: 0
- [25] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426EDEN, RC论文数: 0 引用数: 0 h-index: 0WELCH, BM论文数: 0 引用数: 0 h-index: 0ZUCCA, R论文数: 0 引用数: 0 h-index: 0
- [26] SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE[J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 387 - &EDWARDS, WD论文数: 0 引用数: 0 h-index: 0TORRENS, AB论文数: 0 引用数: 0 h-index: 0HARTMAN, WA论文数: 0 引用数: 0 h-index: 0
- [27] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293EVANS, CA论文数: 0 引用数: 0 h-index: 0机构: INT RECTIFIER CORP,EL SEGUNDO,CA 90245DELINE, VR论文数: 0 引用数: 0 h-index: 0机构: INT RECTIFIER CORP,EL SEGUNDO,CA 90245SIGMON, TW论文数: 0 引用数: 0 h-index: 0机构: INT RECTIFIER CORP,EL SEGUNDO,CA 90245论文数: 引用数: h-index:机构:
- [28] STABILIZATION OF SURFACES OF III .5. COMPOUND CRYSTALS BY MOLECULAR-BEAMS[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (07) : L87 - &FARROW, RFC论文数: 0 引用数: 0 h-index: 0机构: ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORESHIRE,ENGLAND ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORESHIRE,ENGLAND
- [29] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 699 - 701FAVENNEC, PN论文数: 0 引用数: 0 h-index: 0机构: Centre National d'Etudes des TélécommunicationsHARIDON, HL论文数: 0 引用数: 0 h-index: 0机构: Centre National d'Etudes des Télécommunications
- [30] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND[J]. ELECTRONICS LETTERS, 1978, 14 (03) : 51 - 52FRITZSCHE, D论文数: 0 引用数: 0 h-index: 0