TRANSVERSE JUNCTION BURIED HETEROSTRUCTURE (TJ-BH) LASER DIODE GROWN BY MOVPE

被引：13

作者：

SHIMOYAMA, K ^{[1
]}

KATOH, M ^{[1
]}

NOGUCHI, M ^{[1
]}

INOUE, Y ^{[1
]}

GOTOH, H ^{[1
]}

SUZUKI, Y ^{[1
]}

SATOH, T ^{[1
]}

机构：

[1] ELECTROCHEM LAB,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Buried Heterostructure - Laser Diode - Metalorganic Vapor Phase Epitaxy - Transverse Junction;

D O I：

10.1016/0022-0248(88)90622-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：803 / 808

页数：6

共 16 条

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