HIGH-ENERGY (MEV) ION-BEAM MODIFICATIONS OF SPUTTERED MOS2 COATINGS ON SAPPHIRE

被引：11

作者：

BHATTACHARYA, RS ^{[1
]}

RAI, AK ^{[1
]}

ERDEMIR, A ^{[1
]}

机构：

[1] ARGONNE NATL LAB,TRIBOL SECT,ARGONNE,IL 60439

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95705-I

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS2 films. Films of thicknesses 500-7500 angstrom were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag+ ions at a dose of 5 X 10(15) cm-2. Scanning and transmission electron microscopy, Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS1.8. A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface.

引用

页码：788 / 792

页数：5

共 10 条

[1] ION-BEAM BONDING OF THIN-FILMS [J].