A HIGH-PERFORMANCE ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFET-BASED MONOLITHIC OPTOELECTRONIC RECEIVER

被引：10

作者：

KETTERSON, AA ^{[1
]}

TONG, M ^{[1
]}

SEO, JW ^{[1
]}

NUMMILA, K ^{[1
]}

MORIKUNI, JJ ^{[1
]}

KANG, SM ^{[1
]}

ADESIDA, I ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 01期

基金：

美国国家科学基金会;

关键词：

10;

D O I：

10.1109/68.124881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFET's) with f(t)'s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000-OMEGA are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-OMEGA are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3-mu-m finger spacing of the large 100 x 100-mu-m2 MSM.

引用

页码：73 / 76

页数：4

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