HEAVY PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON WITH A GAP DECOMPOSITION SOURCE

被引：27

作者：

LIPPERT, G ^{[1
]}

OSTEN, HJ ^{[1
]}

KRUGER, D ^{[1
]}

GAWORZEWSKI, P ^{[1
]}

EBERL, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70506 STUTTGART,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Doping with phosphorus in solid source silicon molecular beam epitaxy is possible using a GaP decomposition source. This source evaporates solid GaP and is combined with an efficient mass separator system. Homogeneous P doping up to concentrations higher than 1019cm-3 was realized. Surface accumulation of phosphorus was not observed for the low growth temperature of 400°C used in this study. The parasitic Ga incorporation is about three orders of magnitudes below the P concentration. This new phosphorus doping technique is suitable for n-type doping in the range of 1017-1020cm-3.© 1995 American Institute of Physics.

引用

页码：3197 / 3199

页数：3

共 11 条

[1]

CHAI YG, 1985, APPL PHYS LETT, V45, P985

[2] PHOSPHORUS DOPING IN LOW-TEMPERATURE SILICON MOLECULAR-BEAM EPITAXY [J].

FRIESS, E ;

NUTZEL, J ;

ABSTREITER, G .

APPLIED PHYSICS LETTERS, 1992, 60 (18) :2237-2239

[3] LOW-TEMPERATURE SI MOLECULAR-BEAM EPITAXY - SOLUTION TO THE DOPING PROBLEM [J].

GOSSMANN, HJ ;

SCHUBERT, EF ;

EAGLESHAM, DJ ;

CERULLO, M .

APPLIED PHYSICS LETTERS, 1990, 57 (23) :2440-2442

[4] DOPING BY SECONDARY IMPLANTATION [J].

JORKE, H ;

KIBBEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :774-778

[5]

KUBIAK R, 1991, MATER RES SOC SYMP P, V220, P63, DOI 10.1557/PROC-220-63

[6] COEVAPORATION PHOSPHORUS DOPING IN SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUBIAK, RAA ;

PATEL, G ;

LEONG, WY ;

HOUGHTON, R ;

PARKER, EHC .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03) :233-235

[7] EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :931-940

[8] TEMPERATURE-DEPENDENCE OF INCORPORATION PROCESSES DURING HEAVY BORON DOPING IN SILICON MOLECULAR-BEAM EPITAXY [J].

PARRY, CP ;

KUBIAK, RA ;

NEWSTEAD, SM ;

WHALL, TE ;

PARKER, EHC .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :118-125

[9] A COMPARATIVE-STUDY OF HEAVY BORON DOPING IN SILICON AND SI1-XGEX LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SARDELA, MR ;

NI, WX ;

RADPISHEH, H ;

HANSSON, GV .

THIN SOLID FILMS, 1992, 222 (1-2) :42-45

[10]

SITARA T, 1994, APPL PHS LETT, V65, P356

← 1 2 →