STEPPED IV CHARACTERISTICS OF MIS CAPACITORS IN THE INVERSION POLARITY

被引：4

作者：

DAVIDOFF, S

KASHAT, I

KLEIN, N

机构：

[1] Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The inversion-mode I-V characteristic of several kinds of MIS capacitors exhibits a step between steeply rising ranges at low and high voltages. It was found with silicon-dioxide-silicon-nitride capacitors on p-type silicon that current in the low-voltage range is determined by tunneling from the silicon into the insulator. In the step the current is determied by minority-carrier supply from the silicon and in the high-voltage range by avalanching in the silicon depletion layer and by tunneling into the insulator.

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页码：782 / 784

页数：3

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