TECHNIQUE FOR MEASURING IMPURITY CONCENTRATION OF SILICON-ON-SAPPHIRE FILMS USING C-V PLOTS

被引：1

作者：

WORLEY, ER ^{[1
]}

机构：

[1] ROCKWELL INT,COLLINS RADIO GRP,NEWPORT BEACH,CA 92663

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 12期

关键词：

D O I：

10.1016/0038-1101(76)90179-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：997 / 1003

页数：7

共 19 条

[1] THIN-FILM SILICON - PREPATATION, PROPERTIES, AND DEVICE APPLICATIONS [J].

ALLISON, JF ;

DUMIN, DJ ;

HEIMAN, FP ;

MUELLER, CW ;

ROBINSON, PH .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1490-+

[2] NEW METHOD OF MEASURING INTERFACE STATE DENSITIES IN MIS DEVICES [J].

AMELIO, GF .

SURFACE SCIENCE, 1972, 29 (01) :125-+

[3]

BOLEKY EJ, 1971, AFALTR71217 WPAFB TE

[4] ERROR ANALYSIS OF HIGH-FREQUENCY MOS CAPACITANCE CALCULATIONS [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1974, 17 (05) :447-456

[5] CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3228-3231

[6] TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES [J].

BREWS, JR ;

LOPEZ, AD .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1267-1277

[7] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J].

DECLERCK, G ;

VANOVERS.R ;

BROUX, G .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1451-1460

[8] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS [J].

DUMIN, DJ ;

ROSS, EC .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3139-&

[9] THIN-FILM SILICON-ON-SAPPHIRE DEEP DEPLETION MOS TRANSISTORS [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :855-+

[10] GRAPHICAL METHOD FOR DETERMINING FLAT BAND VOLTAGE FOR SILICON ON SAPPHIRE [J].

HYNECEK, J .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :119-120

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