POINT-DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON .2. CONCENTRATIONS BELOW SOLID SOLUBILITY, ION-IMPLANTED PHOSPHORUS

被引：14

作者：

TSAI, JCC ^{[1
]}

SCHIMMEL, DG ^{[1
]}

AHRENS, RE ^{[1
]}

FAIR, RB ^{[1
]}

机构：

[1] MICROELECTRO CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期

关键词：

D O I：

10.1149/1.2100884

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2348 / 2356

页数：9

共 9 条

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JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1117-1124

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[7]

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[8] OXIDATION ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN (100) SILICON [J].

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[9] POINT-DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON .1. CONCENTRATIONS ABOVE SOLID SOLUBILITY [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1508-1518

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