LOW-TEMPERATURE DEPOSITION OF HEXAGONAL BN FILMS BY CHEMICAL VAPOR-DEPOSITION

被引:64
作者
MOTOJIMA, S
TAMURA, Y
SUGIYAMA, K
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D O I
10.1016/0040-6090(82)90056-6
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T [工业技术];
学科分类号
08 ;
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页码:269 / 274
页数:6
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共 12 条
[1]   CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :399-405
[2]   OPTICAL PROPERTIES OF THIN BORON NITRIDE FILMS [J].
BARONIAN, W .
MATERIALS RESEARCH BULLETIN, 1972, 7 (02) :119-&
[3]   CVD-BN FOR BORON-DIFFUSION IN SI AND ITS APPLICATION TO SI DEVICES [J].
HIRAYAMA, M ;
SHOHNO, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1671-1676
[4]   STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION [J].
HYDER, SB ;
YEP, TO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1721-1724
[5]   EFFECT OF GROWTH-PARAMETERS ON THE CVD OF BORON-NITRIDE AND PHOSPHORUS-DOPED BORON-NITRIDE [J].
MURARKA, SP ;
CHANG, CC ;
WANG, DNK ;
SMITH, TE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :1951-1957
[6]   STRUCTURAL, OPTICAL, AND DIELECTRIC PROPERTIES OF REACTIVELY SPUTTERED FILMS IN SYSTEM AIN-BN [J].
NOREIKA, AJ ;
FRANCOMBE, MH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :722-+
[7]   PREPARATION AND PROPERTIES OF THIN FILM BORON NITRIDE [J].
RAND, MJ ;
ROBERTS, JF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) :423-&
[8]   CHEMICAL VAPOR-DEPOSITION OF HEXAGONAL BORON-NITRIDE THICK-FILM ON IRON [J].
TAKAHASHI, T ;
ITOH, H ;
TAKEUCHI, A .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (02) :245-250
[9]   STRUCTURE AND PROPERTIES OF CVD-BN THICK-FILM PREPARED ON CARBON-STEEL SUBSTRATE [J].
TAKAHASHI, T ;
ITOH, H ;
KURODA, M .
JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :418-422
[10]  
Takahashi T., 1981, Yogyo-Kyokai-Shi, V89, P63, DOI 10.2109/jcersj1950.89.1026_63